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Programmable and reconfigurable optics hold significant potential for transforming a broad spectrum of applications, spanning space explorations to biomedical imaging, gas sensing, and optical cloaking. The ability to adjust the optical properties of components like filters, lenses, and beam steering devices could result in dramatic reductions in size, weight, and power consumption in future optoelectronic devices. Among the potential candidates for reconfigurable optics, chalcogenide‐based phase change materials (PCMs) offer great promise due to their non‐volatile and analogue switching characteristics. Although PCM have found widespread use in electronic data storage, these memory devices are deeply sub‐micron‐sized. To incorporate phase change materials into free‐space optical components, it is essential to scale them up to beyond several hundreds of microns while maintaining reliable switching characteristics. This study demonstrated a non‐mechanical, non‐volatile transmissive filter based on low‐loss PCMs with a 200 × 200 µm²switching area. The device/metafilter can be consistently switched between low‐ and high‐transmission states using electrical pulses with a switching contrast ratio of 5.5 dB. The device was reversibly switched for 1250 cycles before accelerated degradation took place. The work represents an important step toward realizing free‐space reconfigurable optics based on PCMs. 

Abstract Chalcogenide optical phase change materials (PCMs) have garnered significant interest for their growing applications in programmable photonics, optical analog computing, active metasurfaces, and beyond. Limited endurance or cycling lifetime is however increasingly becoming a bottleneck toward their practical deployment for these applications. To address this issue, a systematic study elucidating the cycling failure mechanisms of Ge₂Sb₂Se₄Te (GSST) is performed, a common optical PCM tailored for infrared photonic applications, in an electrothermal switching configuration commensurate with their applications in on‐chip photonic devices. Further a set of design rules building on insights into the failure mechanisms is proposed, and successfully implemented them to boost the endurance of the Ge₂Sb₂Se₄Te (GSST) device to over 67 000 cycles.